Project information
Nucleation and growth of oxygen precipitates in silicon

Project Identification

GA202/09/1013

Project Period

1/2009 - 12/2011

Investor / Pogramme / Project type

Czech Science Foundation

Standard Projects

MU Faculty or unit

Faculty of Science

Keywords

nucleation, precipitation, silicon

Cooperating Organization

Institute of Materials Physics of the ASCR, v. v. i.

Responsible person RNDr. Milan Svoboda, CSc.

Publications

Total number of publications: 18

2012

Precipitation in silicon wafers after high temperature preanneal studied by X-ray diffraction methods

MEDUŇA Mojmír RŮŽIČKA Jiří CAHA Ondřej BURŠÍK Jiří SVOBODA Milan

Article in Periodical

Physica B condensed matter, year: 2012, volume: 407, edition: 15, DOI
Studies of influence of high temperature preannealing on oxygen precipitation in CZ Si wafers

MEDUŇA Mojmír CAHA Ondřej BURŠÍK Jiří

Article in Periodical

Journal of crystal growth, year: 2012, volume: 348, edition: 1, DOI

2011

Homogeneous and heterogeneous nucleation of oxygen in Si-CZ

KUBĚNA Josef KUBĚNA Alan CAHA Ondřej MEDUŇA Mojmír

Article in Periodical

Solid State Phenomena, year: 2011, volume: Neuveden, edition: 178-179
Oxygen precipitation studied by x-ray diffraction techniques

MEDUŇA Mojmír CAHA Ondřej RŮŽIČKA Jiří BERNATOVÁ Silvie SVOBODA Milan BURŠÍK Jiří

Article in Periodical

Solid State Phenomena, year: 2011, volume: Neuveden, edition: 178-179
Study of oxide precipitates in silicon using X-ray diffraction techniques

CAHA Ondřej BERNATOVÁ Silvie MEDUŇA Mojmír SVOBODA Milan BURŠÍK Jiří

Article in Periodical

physica status solidi (a), Applied research, year: 2011, volume: 208, edition: 11, DOI
X-RAY LAUE DIFFRACTION STUDY OF OXYGEN PRECIPITATES IN CZOCHRALSKI SILICON

RŮŽIČKA Jiří MEDUŇA Mojmír

Article in Periodical

Materials Structure in Chemistry, Biology, Physics and Technology, year: 2011, volume: 18, edition: 3

2010

Comparative study of multilayers used in monochromators for synchrotron-based coherent hard X-ray imaging

RACK A. WEITKAMP T. RIOTTE M. GRIGORIEV D. RACK T. HELFEN L. BAUMBACH T. DIETSCH R. HOLZ T. KRÄMER M. SIEWERT F. MEDUŇA Mojmír CLOETENS P. ZIEGLER E.

Article in Periodical

Journal of Synchrotron Radiation, year: 2010, volume: 17, edition: 4
Defect Engineering in Czochralski-grown Silicon Studied by TEM

SVOBODA Milan BURŠÍK Jiří MEDUŇA Mojmír CAHA Ondřej KUBĚNA Josef

Conference abstract

Year: 2010, type: Conference abstract
Oxygen Precipitation in CZ Si Wafers after High Temperature Pre-annealing

MEDUŇA Mojmír CAHA Ondřej KUBĚNA Josef KUBĚNA Alan SVOBODA Milan BURŠÍK Jiří

Conference abstract

Year: 2010, type: Conference abstract
X-ray scattering study of oxide precipitates in Cz-Si

CAHA Ondřej MEDUŇA Mojmír BERNATOVÁ Silvie RŮŽIČKA Jiří MIKULÍK Petr BURŠÍK Jiří SVOBODA Milan BERNSTORFF S.

Conference abstract

Year: 2010, type: Conference abstract