Project information
Development and Implementation of Selective Laser Grinding (SLG) and Modification Technology for Silicon Carbide (SiC) Wafer Processing

Modern wide band-gap semiconductors such as silicon carbide (SiC) can endure ten times higher voltage than silicon and operate at higher temperatures. Considering that SiC is a very hard material (9.5 Mohs, compared to 10 Mohs for diamond), the wafer processing (cutting, grinding, polishing) is very challenging. For specific applications, laser technologies seem to offer promising solutions. The main aim of the joint research project is to develop a laser grinding technology for SiC. The Taiwanese side will develop the technology and the equipment, and the Czech side will provide physical characterization of the wafers, which is a prerequisite for a successful manufacturing process, using the long-term expertise in the field of semiconductor characterization available at the Department of Condensed Matter Physics.